TEA1093 Просмотр технического описания (PDF) - Philips Electronics

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производитель

TEA1093

Hands-free IC

Philips Electronics 

Philips Semiconductors

Hands-free IC

Product specification

TEA1093

QUICK REFERENCE DATA

VSREF = 4.2 V; VGND = 0 V; ISUP = 15 mA; VSUP = 0 V (RMS); f = 1 kHz; Tamb = 25 °C; PD = LOW; MUTET = LOW;

RL = 50 Ω; RVOL = 0 Ω; measured in test circuit of Fig.15; unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

ISUP

VBB

IBB(pd)

operating supply current (pin SUP)

stabilized supply voltage

current consumption from pin VBB in

power-down condition

7

−

3.35 3.6

PD = HIGH; VBB = 3.6 V −

400

140 mA

3.85 V

550 µA

ISUP(pd)

current consumption from pin SUP in

power-down condition

PD = HIGH; Vsup = 4.5 V −

55

75

µA

Gvtx

∆Gvtxr

Gvrx

voltage gain from pin MIC to pin MOUT in

transmit mode

voltage gain adjustment with RGAT

voltage gain in receive mode

the difference between RIN1 and RIN2

to LSP1 or LSP2 single-ended load

VMIC = 1 mV (RMS);

RGAT = 30.1 kΩ

VRIN = 20 mV (RMS);

RGAR = 66.5 kΩ;

RL = 50 Ω

12.5 15

−10 −

15.5 18

17.5 dB

+10 dB

20.5 dB

the difference between RIN1 and RIN2

to the difference between LSP1 and

LSP2 bridge-tied load

21.5 24

26.5 dB

∆Gvrxr

VO(p-p)

voltage gain adjustment with RGAR

bridge-tied load (peak-to-peak value)

SWRA

∆SWRA

Tamb

switching range

switching range adjustment with RSWR

referenced to RSWR = 365 kΩ

operating ambient temperature

−15 −

+15 dB

VRIN = 150 mV (RMS); −

5.15 −

V

RL = 33 Ω; note 1

−

40

−

dB

−40 −

+12 dB

−25 −

+75 °C

Note

1. Corresponds to 100 mW output power.

1996 Feb 09

3

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