TDA8511J/N2 Просмотр технического описания (PDF) - Philips Electronics
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TDA8511J/N2 Datasheet PDF : 16 Pages
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Philips Semiconductors
4 × 13 W single-ended power amplifiers
Preliminary specification
TDA8511J
AC CHARACTERISTICS
VP = 15 V; RL = 4 Ω; f = 1 kHz; Tamb = 25 °C; measured in Fig.6; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
PO
THD
PO
fl
fh
Gv
SVRR
output power
total harmonic distortion
output power
low frequency roll-off
high frequency roll-off
closed loop voltage gain
supply voltage ripple rejection
Zi
Vn(o)
input impedance
noise output voltage
αCS
channel separation
∆Gv
channel unbalance
Dynamic distortion detector
note 1
THD = 0.5%
THD = 10%
PO = 1 W
RL = 2 Ω; note 1
THD = 0.5%
THD = 10%
at −1 dB; note 2
at −1 dB
note 3
on
mute
standby
4
5.5 −
W
5.5 7
−
W
−
0.06 −
%
−
10 −
W
−
13 −
W
−
25 −
Hz
20 −
−
kHz
19 20 21 dB
48 −
−
dB
46 −
−
dB
80 −
−
dB
50 60 75 kΩ
on; Rs = 0 Ω; note 4 −
50 −
µV
on; Rs = 10 kΩ; note 4 −
70 100 µV
mute; notes 4 and 5 −
50 −
µV
Rs = 10 kΩ
40 60 −
dB
−
−
1
dB
THD
total harmonic distortion
V16 ≤ 0.6 V;
no short-circuit
−
10 −
%
Notes
1. Output power is measured directly at the output pins of the IC.
2. Frequency response externally fixed.
3. Ripple rejection measured at the output with a source-impedance of 0 Ω, maximum ripple amplitude of 2 V (p-p) and
at a frequency between 100 Hz and 10 kHz.
4. Noise measured in a bandwidth of 20 Hz to 20 kHz.
5. Noise output voltage independent of Rs (Vi = 0 V).
2000 Mar 10
8
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