TDA7565(2003) Просмотр технического описания (PDF) - STMicroelectronics
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TDA7565 Datasheet PDF : 10 Pages
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TDA7565
ELECTRICAL CHARACTERISTICS (continua)
(Refer to the test circuit, VS = 13.5V; RL = 4Ω; f = 1KHz; Voltage converter Disabled (VCOff); Tamb = 25°C; unless
otherwise specified.)
Symbol
Parameter
VMin(pin27) Mute in Threshold Voltage
VMout(pin27) Mute out Threshold Voltage
AM(pin 27) Mute Attenuation
VOLTAGE CONVERTER
Vcc1, Converter Output Voltage
Vcc2 (VC = ON)
Fs Voltage Converter Switching
Frequency
Vmgl Mos Gate Output Low Voltage
Vmgh Mos Gate Output High Voltage
Vmgclamp
tf
tr
Vmgl
(VCoff)
Mos Gate Output Clamp Voltage
Fall Time
Rise Time
Mos Gate Output Voltage with
Voltage Converter Disabled
Test Condition
Amp. Mute
VS = 14V
D3 (IB2) = 0; D6 (IB2) = 0
D3 (IB2) = 1; D6 (IB2) = 0
D3 (IB2) = 0; D6 (IB2) = 1
D3 (IB2) = 1; D6 (IB2) = 1
D6 (IB1) = 0; D7 (IB1) = 0
D6 (IB1) = 1; D7 (IB1) = 0
D6 (IB1) = 0; D7 (IB1) = 1
D6 (IB1) = 1; D7 (IB1) = 1
Io = 250mA
Io = 20mA
Io = 200mA
Io = 5mA
Co = 1nF
Co = 1nF
Io = 5mA
Min. Typ. Max. Unit
1.5
V
3.5
V
80
90
15
V
16.5
V
17.5
V
18.5
V
100
kHz
150
kHz
260
kHz
400
kHz
1
V
10.5
V
10
V
TBD
V
20
ns
50
ns
0.5
V
Figure 1. Demoboard Schematic
VS
(Vbatt)
C7
2200µF
C10 2.2nF
R5 10 1W
L1 100µH
STPS30L40CT
C8
220nF
DGND SCL
D1 C11
SDA 3300µF
C9
10nF
R4
3.3
1W
R1 50Ω
Q1 R3 10Ω
2 23
26
STP60NE06
C1 220nF
IN RF
16
VCC
C12
100nF
7 21
C2 220nF
IN RR
15
C3 220nF
IN LF
12
TDA7565
C4 220nF
IN LR
13
C13
10µF
5
OUT RF+
18
20
OUT RF-
OUT RR+
22
24
OUT RR-
OUT LF+
10
8
OUT LF-
OUT LR+
6
MUTE
27 11
17
14
C6
C5
10µF
1µF
9 3 19 25 1
4
OUT LR-
D00AU1224B
4/10
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