TC911A/TC911B
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Total Supply Voltage (VDD to VSS) ........................-18V
Input Voltage .................... VDD + 0.3V) to (VSS – 0.3V)
Current Into Any Pin............................................ 10mA
While Operating ...................................... 100μA
Package Power Dissipation (TA - 70°C)
Plastic DIP............................................. 730mW
Plastic SOIC .......................................... 470mW
Operating Temperature Range
C Device....................................... 0°C to +70°C
Storage Temperature Range.............. -65°C to +150°C
*Stresses above those listed under "Absolute Maxi-
mum Ratings" may cause permanent damage to the
device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
TC911A AND TC911B ELECTRICAL SPECIFICATIONS
Electrical Characteristics: VS = ±5V, TA = +25°C, unless otherwise indicated.
TC911A
TC911B
Symbol Parameter
Min
Typ
VOS
TCVOS
IB
IOS
eN
CMRR
CMVR
AOL
VOUT
BW
SR
PSRR
VS
IS
Note
Input Offset
—
5
Voltage
Average Temp.
—
0.05
Coefficient of
—
0.05
Input Offset
Voltage
Average Input
—
—
Bias Current
—
—
—
—
Average Input
—
5
Offset Current
—
—
Input Voltage
—
0.65
Noise
—
11
Common Mode
110
116
Rejection Ratio
Common Mode
VSS
—
Voltage Range
Open-Loop
115
120
Voltage Gain
Output Voltage VSS + 0.3 —
Swing
Closed Loop
—
1.5
Bandwidth
Slew Rate
—
2.5
Power Supply
112
—
Rejection Ratio
Operating
±3.3
—
Supply Voltage
6.5
—
Range
Quiescent
—
350
Supply Current
1: Characterized; not 100% tested.
Max
Min
15
—
0.15
—
0.15
—
70
—
3
—
4
—
20
—
1
—
—
—
—
—
—
105
VDD – 2
VSS
—
110
VDD – 0.9 VSS + 0.3
—
—
—
—
—
105
±8
±3.3
16
6.5
600
—
Typ
Max
Unit
Test Conditions
15
30
μV TA = +25°C
0.1
0.25 μV/°C 0°C ≤ TA ≤ +70°C
0.1
0.25 μV/°C -25°C ≤ TA ≤ +85°C
(Note 1)
—
—
—
10
—
0.65
11
110
—
120
—
1.5
120
pA TA = +25°C
4
nA 0°C ≤ TA ≤ +70°C
6
nA -25°C ≤ TA ≤ +85°
40
pA TA = +25°C
1
nA TA = +85°C
—
μVP-P 0.1 to 1Hz, RS ≤ 100Ω
—
μVP-P 0.1 to 10Hz, RS ≤ 100Ω
—
dB VSS ≤ VCM ≤ VDD - 2.2
VDD – 2
V
—
dB RL = 10kΩ, VOUT = ±4V
VDD – 0.9 V RL = 10kΩ
—
MHz Closed Loop Gain = +1
2.5
—
V/μsec RL = 10kΩ, CL = 50pF
—
—
dB ±3.3V to ±5.5V
—
±8
V Split Supply
—
16
V Single Supply
—
800
μA VS = ±5V
© 2005 Microchip Technology Inc.
DS21481C-page 3