Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Номер в каталоге
Компоненты Описание
TC74AC283P Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
TC74AC283P
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
Toshiba
TC74AC283P Datasheet PDF : 10 Pages
1
2
3
4
5
6
7
8
9
10
TC74AC283P/F/FN
Electrical Characteristics
DC Characteristics
Characteristics
High-level input
voltage
Low-level input
voltage
High-level output
voltage
Low-level output
voltage
Input leakage
current
Quiescent supply
current
Symbol
V
IH
V
IL
V
OH
V
OL
I
IN
Test Condition
Ta
=
25°C
Ta
= −
40~85°C
V
CC
(V)
Min
Typ.
Max
Min
Max
Unit
2.0 1.50
⎯
⎯
1.50
⎯
⎯
3.0 2.10
⎯
⎯
2.10
⎯
V
5.5 3.85
⎯
⎯
3.85
⎯
2.0
⎯
⎯
0.50
⎯
0.50
⎯
3.0
⎯
⎯
0.90
⎯
0.90
V
5.5
⎯
⎯
1.65
⎯
1.65
2.0 1.9 2.0
⎯
1.9
⎯
I
OH
= −
50
μ
A
V
IN
=
V
IH
or
V
IL
I
OH
= −
4 mA
3.0 2.9 3.0
⎯
2.9
⎯
4.5 4.4 4.5
⎯
4.4
⎯
V
3.0 2.58
⎯
⎯
2.48
⎯
I
OH
= −
24 mA
4.5 3.94
⎯
⎯
3.80
⎯
I
OH
= −
75 mA (Note) 5.5
⎯
⎯
⎯
3.85
⎯
2.0
⎯
0.0 0.1
⎯
0.1
I
OL
=
50
μ
A
3.0
⎯
0.0 0.1
⎯
0.1
V
IN
=
V
IH
or
V
IL
I
OL
=
12 mA
4.5
⎯
0.0 0.1
⎯
0.1
V
3.0
⎯
⎯
0.36
⎯
0.44
I
OL
=
24 mA
4.5
⎯
⎯
0.36
⎯
0.44
I
OL
=
75 mA (Note) 5.5
⎯
⎯
⎯
⎯
1.65
V
IN
=
V
CC
or GND
5.5
⎯
⎯ ±
0.1
⎯ ±
1.0
μ
A
I
CC
V
IN
=
V
CC
or GND
5.5
⎯
⎯
8.0
⎯
80.0
μ
A
Note:
This spec indicates the capability of driving 50
Ω
transmission lines.
One output should be tested at a time for a 10 ms maximum duration.
5
2007-10-01
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]