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TC58NVG0S3AFT05 Просмотр технического описания (PDF) - Toshiba
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Компоненты Описание
производитель
TC58NVG0S3AFT05
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Toshiba
TC58NVG0S3AFT05 Datasheet PDF : 33 Pages
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BLOCK DIAGRAM
I/O1
to
I/O8
CE
CLE
ALE
WE
RE
WP
RY / BY
I/O
Control
circuit
Logic
control
RY / BY
Status register
Address register
Command register
Control
circuit
TC58NVG0S3AFT05
V
CC
V
SS
Column buffer
Column decoder
Data register
Sense amp
Memory
cell array
HV generator
ABSOLUTE MAXIMUM RATINGS
SYMBOL
RATING
V
CC
V
IN
V
I/O
P
D
T
SOLDER
T
STG
T
OPR
Power Supply Voltage
Input Voltage
Input /Output Voltage
Power Dissipation
Soldering Temperature (10 s)
Storage Temperature
Operating Temperature
VALUE
−
0.6 to 4.6
−
0.6 to 4.6
−
0.6 V to V
CC
+
0.3 V (
≤
4.6 V)
0.3
260
−
55 to 150
0 to 70
CAPACITANCE
*
(Ta
=
25°C, f
=
1 MHz)
SYMB0L
PARAMETER
CONDITION
MIN
C
IN
Input
V
IN
=
0 V
C
OUT
Output
V
OUT
=
0 V
*
This parameter is periodically sampled and is not tested for every device.
MAX
10
10
UNIT
V
V
V
W
°C
°C
°C
UNIT
pF
pF
2003-08-20A 2/33
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