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TC1266

200mA PCI LDO

Microchip Technology 

TC1266

TC1266 ELECTRICAL SPECIFICATIONS (CONTINUED)

Electrical Characteristics: TA = +25°C, VIN = 5V, VAUX = 3.3V, IOUT = 0.1mA, COUT = 4.7µF, unless otherwise noted. Boldface

type specifications apply over full operating temperature range.

Symbol

Parameter

Min

Typ

Max

Units

Test Conditions

VDR

Drive Voltage

VIN - 0.2 VIN - 0.1

—

VIN - 0.3

—

—

—

35

150

—

—

200

V

4.3V ≤ VIN ≤ 5.5V, IDR = 200µA

mV VIN < VTH(LO), IDR = 200µA

IDR(PK)

tDH

tDL

Note 1:

2:

3:

4:

5:

6:

Peak Drive Current

7

—

—

mA Sinking: VIN = 3.75V, VDR = 1V;

6

—

—

Sourcing: VIN = 4.3V, VIN – VDR = 2V

Drive High Delay

(Notes 1, 5)

—

4

—

µsec CDR = 1.2nF, VIN ramping up,

—

—

8

measured from VIN = VTH(HI) to VDR = 2V

Drive Low Delay

(Notes 1, 5)

—

0.6

1.5

µsec CDR = 1.2nF, VIN ramping down,

—

—

3.0

measured from VIN = VTH(LO) to VDR = 2V

Ensured by design.

See 5V Detect Thresholds, Figure 4-1.

Recommended source impedance for 5V supply: ≤ 0.25Ω. This will ensure that IOUT x RSOURCE < VHYST, thus avoiding DR toggling during

5V detect threshold transitions.

In Application Circuit, Figure 3-1.

See Timing Diagram, Figure 4-2.

Ground Current is independent of ILOAD.

© 2002 Microchip Technology Inc.

DS21377B-page 3

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