CGY2011G Просмотр технического описания (PDF) - Philips Electronics

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производитель

CGY2011G

GSM 4 W power amplifiers

Philips Electronics 

Philips Semiconductors

GSM 4 W power amplifiers

Objective specification

CGY2010G; CGY2011G

FUNCTIONAL DESCRIPTION

Operating conditions

The CGY2010G and CGY2011G are designed to meet the

European Telecommunications Standards Institute (ETSI)

GSM documents, the “ETS 300 577 specification”, which

are defined as follows:

• ton = 542.8 µs

• T = 4.3 ms

• Duty cycle = 1/8

The devices are specifically designed for pulse operation

allowing the use of a LQFP48 plastic package.

Power amplifier

The power amplifier consists of four cascaded gain stages

with an open-drain configuration. Each drain has to be

loaded externally by an adequate reactive circuit which

also has to be a DC path to the supply.

The amplifier bias is set by means of a negative voltage

applied at pins VGG1 and VGG2. This negative voltage must

be present before the supply voltage is applied to the

drains to avoid current overstress for the amplifier.

Power sensor driver

The power sensor driver is a buffer amplifier that delivers

a signal to the DETO output pin which is proportional to the

amplifier power. This signal can be detected by external

diodes for power control purpose. As the sensor signal is

taken from the input of the last stage of the PA, it is isolated

from disturbances at the output by the reverse isolation of

the PA output stage.

Impedance mismatch at the PA output therefore, does not

significantly influence the signal delivered by the power

sensor as this normally occurs when power sense is made

using a directional coupler. Consequently the cost and

space of using a directional coupler are saved.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134); general operating conditions applied.

SYMBOL

VDD

VGG

Tj(max)

Tstg

Ptot

PARAMETER

positive supply voltage

negative supply voltage

maximum operating junction temperature

IC storage temperature

total power dissipation

MIN.

−

−

−

−

−

MAX.

7

−10

150

150

1.5

UNIT

V

V

°C

°C

W

THERMAL CHARACTERISTICS

General operating conditions applied.

SYMBOL

Rth j-c

PARAMETER

thermal resistance from junction to case; note 1

Note

1. This thermal resistance is measured under GSM pulse conditions.

VALUE

32

UNIT

K/W

1996 Jul 08

5

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