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TC1041

Linear Building Block – Dual Low Power Comparator and Voltage Reference with Programmable Hysteresis

Microchip Technology 

TC1041

1.0 ELECTRICAL

CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ......................................................6.0V

Voltage on Any Pin .......... (VSS – 0.3V) to (VDD + 0.3V)

Junction Temperature....................................... +150°C

Operating Temperature Range............. -40°C to +85°C

Storage Temperature Range .............. -55°C to +150°C

*Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These

are stress ratings only and functional operation of the device

at these or any other conditions above those indicated in the

operation sections of the specifications is not implied.

Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability.

TC1041 ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Typical values apply at 25°C and VDD = 3.0V. Minimum and maximum values apply for TA = -40° to

+85°C and VDD = 1.8V to 5.5V, unless otherwise specified.

Symbol

Parameter

Min

Typ

Max

Units

Test Conditions

VDD

Supply Voltage

IQ

Supply Current Operating

Comparators

1.8

—

5.5

V

—

10

15

µA All Outputs Open

VIR

IN+ Voltage Range

VSS – 0.2

—

VDD + 0.2

V

VOS

Input Offset Voltage

-5

—

+5

mV VDD = 3V, TA = 25°C

-5

+5

mV TA = -40°C to 85°C (Note 1)

IB

Input Bias Current

—

—

±100

pA TA = 25°C,

IN+ = VDD to VSS

VOH

Output High Voltage

VDD – 0.3

—

—

V

RL = 10kΩ to VSS

VOL

Output Low Voltage

—

—

0.3

V

RL = 10kΩ to VDD

CMRR

Common Mode Rejection Ratio

66

—

—

dB TA = 25°C, VDD = 5V

VCM = VDD to VSS

PSRR

Power Supply Rejection Ratio

60

—

—

dB TA = 25°C

VDD = 1.8V to 5V

ISRC

Output Source Current

1

—

—

mA IN+ = VDD,

Output Shorted to VSS

VDD = 1.8V

ISINK

Output Sink Current

2

—

—

mA IN+ = VSS,

Output Shorted to VDD

VDD = 1.8V

VHYST

Voltage Range at HYST Pin

VREF – 0.08

—

VREF

V

IHYST

Hysteresis Input Current

—

—

±100

nA

tPD1

Response Time

—

4

—

µsec 100mV Overdrive, CL = 100pF

tPD2

Response Time

—

6

—

µsec 10mV Overdrive, CL = 100pF

Voltage Reference

VREF

Reference Voltage

1.176

1.200

1.224

V

IREF(SOURCE) Source Current

50

—

—

µA

IREF(SINK)

Sink Current

50

—

—

µA

CL(REF)

Load Capacitance

—

—

100

pF

EVREF

Noise Voltage

—

20

—

µVRMS 100Hz to 100kHz

eVREF

Noise Voltage Density

—

1.0

—

µV/√Hz 1kHz

Note 1: VOS is measured as (VUT + VLT – 2VREF)/2 where VUT is the upper hysteresis threshold and VLT is the lower hysteresis threshold with

VREF – VHYST set to 10mV. This represents the assymetry of the hysteresis thresholds around VREF.

DS21346B-page 2

© 2002 Microchip Technology Inc.

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