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TB62702F Просмотр технического описания (PDF) - Toshiba

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Компоненты Описание
производитель
TB62702F Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
TB62702P/F
RECOMMENDED OPERATING CONDITIONS (Ta = 40~85°C, VSS = 0 V)
CHARACTERISTIC
SYMBOL
CONDITION
MIN TYP. MAX UNIT
Supply Voltage
Input Voltage
"H" Level
"L" Level
Output DrainSource Voltage
Output Current
P
Power Dissipation
F
VDD
VIH
VIL
VOUT
IOUT
Duty = 100%, All output on
4.5
5
5.5
V
0.7
VDD
VDD
V
0
0.3
VDD
30
V
24
mA /
ch
760
PD
mW
(Note 1)
470
Note 1: On Glass Epoxy (50 × 50 × 1.6 mm Cu 40%)
ELECTRICAL CHARACTERISTICS (Ta = 40~85°C, VDD = 4.5~5.5 V, VSS = 0 V)
CHARACTERISTIC
Output Voltage
Output Resistor
"L" Level
"L" Level
"L" Level
"L" Level
Output Leakage Current
SYMBOL
VDS1
VDS1
VDS2
VDS2
RON
IOZ1
IOZ2
TEST
CIR
CUIT
TEST CONDITION
IOUT = 15 mA, Ta = 25°C
IOUT = 15 mA
IOUT = 26 mA, Ta = 25°C
IOUT = 26 mA
Ta = 25°C, IOUT = 26 mA
VOUT = 30 V, EN = "L"
1 bit
VOUT = 30 V, EN = "L"
10 bit
MIN TYP. MAX UNIT
0.18
0.27
V
0.31
0.47
12
10
µA
±1
Input Current
Output Current
"H" Level
"L" Level
Input Voltage
"H" Level
"L" Level
Operating Supply Current
Standby Supply Current
IIN
IIL
IOH
IOL
VIH
VIL
IDD1
IDD2
VIN = VDD or VSS
ENABLE, VIN = VSS
SOUT
VDS = 4.6 V, VDD = 5.0 V
SOUT
VDS = 0.4 V, VDD = 5.0 V
fCLK = 5 MHz
NO loads, 1 bit
±1
µA
27.5 55.0 110.0
400 600
µA
400 600
0.7
VDD
VDD
V
0
0.3
VDD
1500
µA
500
3
2006-06-14

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