TAT2814A1L Просмотр технического описания (PDF) - TriQuint Semiconductor
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TAT2814A1L Datasheet PDF : 11 Pages
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TAT2814A
DOCSIS 3.0 / Edge QAM Variable Gain Amplifier
Specifications
Absolute Maximum Ratings
Parameter1
Storage Temperature
Device Voltage
Rating
-40 to +100 oC
+10 V
1. Operation of this device outside the parameter ranges
given above may cause permanent damage.
2. TJ for typical VDD = 115 oC.
Recommended Operating Conditions
Parameter
VDD - stage 1
VPA – stage 2
Operating Case Temp
TJ (for >106 hours MTTF)2
Min Typ Max Units
5
V
8
V
-20
+85 oC
150 oC
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: ground paddle temp = 25 ºC, output stage VPA = +8V, includes input and output balun losses.
Parameter
Conditions
Min Typical Max Units
Operational Frequency Range
45
1003 MHz
Gain at 1003 MHz
See Note 1
27.5
30
32
dB
Gain Variation over Temp
See Note 2
1.25
dB
Gain Flatness
See Note 3
+/- 0.25
± 0.5 dB
Gain Slope
See Note 4
-1.4
-1.0
dB
Attenuator Range
Max Gain - Min Gain
18
dB
Input Return Loss
See Note 1
18
dB
Output Return Loss
EQAM Vout
See Note 1
Adjacent 5,6
20
55.0
56.5
dB
dBmV/ch
Four Channel ACPR on a Single Port
Next-adjacent channel5,7
Third-adjacent channel5,8
EQAM Vout
See Notes 5 and 9
63.0
65.0
dBmV
Single Channel Harmonics
Output P1dB
Output IP3
Noise Figure
1st stage current, at 5 V
2nd stage current, at 8 V
Thermal Resistance (junction to case) jc
See Note 10
28
dBm
49
dBm
2.7
dB
290
330 mA
415
440 mA
16.8
oC/W
Notes:
1. IAGC set to 1 mA.
2. Maximum gain deviation within passband with ground paddle temp. range of -20°C to +85°C relative to +45°C.
3. Peak deviation from straight line across full band.
4. Max slope of best fit straight line over all attenuator settings.
5. Production tested at 66 MHz, 330 MHz, and 990 MHz.
6. Adjacent channel (750 kHz from channel block edge to 6 MHz from channel block edge) better than -60 dBc.
7. Next-adjacent channel (6 MHz from channel block edge to 12 MHz from channel block edge) better than -63 dBc.
8. Third-adjacent channel (12 MHz from channel block edge to 18 MHz from channel block edge) better than -65 dBc.
9. In each of 2N contiguous 6 MHz channels or in each of 3N contiguous 6 MHz channels coinciding with 2nd harmonic and with 3rd
harmonic components, respectively (up to 1002 MHz) better than -63 dBc.
10. 150 MHz tone spacing at 8 dBm/tone.
Data Sheet: Rev D 05-03-12
© 2012 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without noticee
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