TA8493BF Просмотр технического описания (PDF) - Toshiba

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TA8493BF

Toshiba Bipolar Linear Integrated Circuit Multi-Chip

Toshiba 

• Hall element bias circuit

TA8493F/AF/BF

HB

The hall element bias current is turned off when the driver IC is in standby state.

Make sure that the negative hall bias line is connected to the HB pin.

The remaining voltage is as follows:

VHB = 1.2 V (typ.)

at IHB = 10 mA

Furthermore, this circuit cannot be used if FG output is necessary in standby state.

When the HB terminal is not used, the negative hall bias line must be connected to GND with a resistor in

between.

• FG amp circuit

FGO

This circuit uses a hall element signal which is output to FGO after a Schmitt stage.

The FG amp has a hysteresis of 20 mVp-p (typ.) and its output voltages are

High level: VCC − 0.5 to VCC [V]

Low level: GND to 0.5 V at IOFG = 10 µA

The FG amp is active when it is in standby state. When the hall element signal is input, the FG signal is

output.

11

2003-10-07

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