TA8492P(2001) Просмотр технического описания (PDF) - Toshiba
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TA8492P Datasheet PDF : 11 Pages
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Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
Output current
Power dissipation
Operating temperature
Storage temperature
VS
20
V
VCC
20
V
IO
1.5
A
1.4 (Note 1)
PD
W
2.7 (Note 2)
Topr
−30~85
°C
Tstg
−55~150
°C
Note 1: Not mounted on the PCB
Note 2: Mounted on the PCB (PCB area: 50 × 50 × 0.8 mm cu area: over 60%)
Electrical Characteristics (Ta = 25°C, VCC = VS = 12 V)
Characteristics
Supply current
Upper
Output saturation voltage
Lower
Output leak current
Upper
Lower
Hall Amp.
Input sensitivity
Common mode input
voltage range
Symbol
ICC-1
ICC-2
ICC-3
VSAT (U)
VSAT (L)
IL (U)
IL (L)
VH
VCMRH
Test
Circuit
Test Condition
VCC = 12 V, 3ST: GND,
VS: Open
1 VCC = 18 V, 3ST: GND,
VS: Open
Stop (3ST = VCC)
2 IO = 1 A (source current)
3 IO = 1 A (sink current)
4 VS = 20 V
5 VS = 20 V
6
7
Stop
VSTP
CW/CCW
control operation voltage CW
VFW
6
CCW
VRV
Thermal shut-down operating
temperature
TSD
TA8492P
Min Typ. Max Unit
5.0 7.0
6.0
9.0
mA
20
2
VCC −
0.4
2.5
0
2.5
1.35
0.4
4
1.7
V
0.6
50
µA
50
400 mVp-p
VCC −
3.5
V
VCC
6.5
V
0.4
160
°C
2001-02-01 3/11
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