TA2109F Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
TA2109F Datasheet PDF : 9 Pages
| |||
Characteristics
Transfer resistance
TE
TPI (TNI)
→ TEO
SBAD
TPI (TNI)
→ SBAD
Transfer resistance range
Max transfer resistance
Min transfer resistance
Gain balance
Frequency characteristic
Cut-Off frequency 1
Cut-Off frequency 2
Output offset voltage
Noise/Distortion rate
Upper limit output voltage
Lower limit output voltage
Permissive load
resistance
Transfer resistance
Frequency characteristic
Noise/Distortion rate
Operation reference
voltage
RFRP
RFIS
→ RFRP
Upper limit output voltage
Permissive load
resistance
Gain voltage
Detection frequency
characteristic
Operation reference
voltage 1
Operation reference
voltage 2
Permissive load
resistance
Symbol
RT
∆RT
GB
fc1
fc2
VOS
THD
VOH
VOL
RLM
RT
fc
THD
VOPR
VOH
RLM
Gv
fc
VOPR1
VOPR2
RLM
Test
Circuit
Test Condition
1
f = 1 kHz, TEB = VR,
RNF = 33 kΩ
TEB = VR reference
1 TEB = GND
TEB = 2 VR
1 TEB = VR
1 RNF = 33 kΩ
1 VR reference, input open
1 f = 1 kHz, VTEO = 2.0 Vp-p
1 GND reference
1 GND reference
1
―
1 f = 1 kHz, TEB = VR
1 −3dB point
1 f = 1 kHz, VSBAD = 1.5 Vp-p
TNI/TPI = VR, VR reference
1
TNI/TPI = HiZ, VR reference
1 GND reference
1
―
1
―
― SEL = VCC
1 VR reference, No signal
1
VR reference, 700 kHz,
1.2 Vp-p
1
―
TA2109F
Min Typ. Max Unit
1.53 1.70 1.87 MΩ
35
45
55
%
−55 −45 −35
%
−1.0 ― +1.0 dB
―
44
―
kHz
―
240
―
kHz
−80
―
+80 mV
―
−40
―
dB
3.8
―
―
V
―
―
0.5
V
10
―
―
kΩ
416 520 624 kΩ
―
44
―
kHz
―
−40
―
dB
−1.1 −1.0 −0.9
V
−1.2 −1.1 −1.0
3.8
―
―
V
10
―
―
kΩ
1.37 1.46 1.54 V/V
―
100
―
kHz
−1.1 −1.0 −0.9
V
+0.65 +0.75 +0.85 V
10
―
―
kΩ
Note: If the IC is used abnormally (ex. wrongly mounted), it may be damaged or destroyed.
5
2002-08-06
Share Link: 