T835H Просмотр технического описания (PDF) - STMicroelectronics
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T835H Datasheet PDF : 10 Pages
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T835H, T850H
Characteristics
Figure 9.
Relative variation of critical rate of
decrease of main current (dI/dt)c
versus reapplied (dV/dt)c
(typical values)
Figure 10.
Relative variation of critical rate of
decrease of main current versus
junction temperature
(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
(dV/dt)C (V/µs)
1.0
10.0
(dI/dt)c [Tj] / (dI/dt)c [Tj=150°C]
8
7
6
5
4
3
2
1
Tj(°C)
0
100.0
25
50
75
100
125
150
Figure 11. Leakage current versus junction
temperature for different values of
blocking voltage (typical values)
IDRM/IRRM(µA)
1.0E+04
1.0E+03
1.0E+02
1.0E+01
VDRM=VRRM=600 V
VDRM=VRRM=400 V
VDRM=VRRM=200 V
1.0E+00
1.0E-01
1.0E-02
Tj(°C)
25
50
75
100
125
150
Figure 12.
Variation of thermal resistance
junction to ambient versus copper
surface under tab (Epoxy printed
circuit board FR4,
copper thickness = 35 µm)
Rth(j-a)(°C/W)
80
70
D²PAK
60
50
40
30
20
10
0
0
SCU(cm²)
5
10
15
20
25
30
35
40
5/10
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