T835H Просмотр технического описания (PDF) - STMicroelectronics
Номер в каталоге
Компоненты Описание
производитель
T835H Datasheet PDF : 10 Pages
| |||
T835H, T850H
Characteristics
Table 3. Static Characteristics
Symbol
Test Conditions
VT (1)
Vt0 (1)
Rd (1)
IDRM
IRRM (2)
ITM = 11 A, tp = 380 µs
Tj = 25° C
Threshold voltage
Tj = 150° C
Dynamic resistance
Tj = 150° C
VDRM = VRRM
Tj = 25° C
Tj = 150° C
VD/VR = 400 V (at peak mains voltage) Tj = 150° C
VD/VR = 200 V (at peak mains voltage) Tj = 150° C
1. for both polarities of A2 referenced to A1.
2. tp = 380 µs.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
Table 4. Thermal resistance
Symbol
Parameter
Rth(j-c)
Rth(j-a)
Junction to case (AC)
Junction to ambient
S = 1 cm2
D2PAK / TO-220AB
TO-220AB Ins
D2PAK
TO-220AB / TO-220AB Ins
Value
Unit
1.5
V
0.80
V
52
mΩ
5
µA
3.1
2.5
mA
2.0
Value
1.85
3.7
45
60
Unit
° C/W
Figure 1.
P(W)
10
9
α=180 °
8
7
6
5
4
3
2
1
0
0
1
Maximum power dissipation versus Figure 2. RMS on-state current versus case
RMS on-state current (full cycle)
temperature (full cycle)
IT(RMS) (A)
9
8
TO-220AB/D²PAK
7
TO-220AB
Insulated
6
5
4
3
2
180°
1
IT(RMS)(A)
0
2
3
4
5
6
7
8
0
TC(°C)
25
50
75
100
125
150
3/10
Share Link: 