T1220T-6I Просмотр технического описания (PDF) - STMicroelectronics
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T1220T-6I Datasheet PDF : 9 Pages
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T12T
Characteristics
Figure 7.
Non repetitive surge peak on state Figure 8.
current for a sinusoidal
Relative variation of gate trigger
current and gate trigger voltage
versus junction temperature
ITSM(A), I²t (A²s)
1000
dI/dt limitation: 50 A/µs
100
Tj initial=25°C
ITSM
I²t
IGT, VGT[Tj] / IGT, VGT[Tj=25 °C]
3.0
typical values
2.5
2.0
IGT Q3
IGT Q1-Q2
1.5
1.0
VGT Q1-Q2-Q3
pulse with width tp < 10 ms and corresponding value of I2T
10
0.01
0.10
1.00
tP(ms)
10.00
0.5
Tj(°C)
0.0
- 50
-25
0
25
50
75
100
125
Figure 9.
Relative variation of holding
Figure 10. Relative variation of critical rate of
current and latching current versus
decrease of main current versus
junction temperature
(dV/dt)c
IH, IL [Tj] / IH, IL [Tj=25 °C]
2.5
2.0
typical values
1.5
1.0
IL
0.5
IH
Tj(°C)
0.0
-50
-25
0
25
50
75
100
125
7 dV/dt [T j] / dV/dt [T j=125 °C]
typical values
6
Logic Level and Snubberless types
VD=VR=402 V
5
4
3
2
1
Tj(°C)
0
25
50
75
100
125
Figure 11. Relative variation of critical rate of Figure 12. Leakage current versus junction
decrease of main current versus
temperature for different values of
junction temperature
blocking voltage (typical values)
8 (dI/dt)C [T j] / (dI/dt) c [T j=125 °C]
7
6
5
4
3
2
1
0
25
50
75
Tj(°C)
100
125
IDRM/IRRM [Tj;V DRM/VRRM]/IDRM/IRRM [Tj=125°C;7 00V]
1.0E+00
VDRM=VRRM
=600 V
1.0E-01
VDRM=VRRM
=400 V
1.0E-02
VDRM=VRRM
=200 V
1.0E-03
Tj(°C)
25
50
75
100
125
Doc ID 16487 Rev 2
5/9
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