T1220T-6I Просмотр технического описания (PDF) - STMicroelectronics
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T1220T-6I Datasheet PDF : 9 Pages
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Characteristics
T12T
Table 5. Thermal resistance
Symbol
Rth(j-c) Junction to case (AC)
Rth(j-a) Junction to ambient (DC)
Parameter
Value
2.6
60
Unit
°C/W
°C/W
Figure 1. Maximum power dissipation versus Figure 2. On-state rms current versus case
rms on-state current (full cycle)
temperature (full cycle)
P(W)
15
14
α=180°
13
12
11
10
9
8
7
6
180°
5
4
3
2
1
IT(RMS)(A)
0
0
1
2
3
4
5
6
7
8
9 10 11 12
IT(RMS)(A)
13
12
α=180°
11
10
9
8
7
6
5
4
3
2
1
TC(°C)
0
0
25
50
75
100
125
Figure 3. On-state rms current versus
ambient temperature
IT(RMS)(A)
3.0
2.5
α=180°
2.0
1.5
1.0
0.5
0.0
0
Ta(°C)
25
50
75
100
125
Figure 4. Relative variation of thermal
impedance versus pulse duration
1.0E+00 K=[Zth/Rth]
Zth(j-c)
Zth(j-a)
1.0E -01
1.0E -02
1.0E -03
1.0E -02
1.0E -01
1.0E+00
1.0E+01
tP(s)
1.0E+02 1.0E+03
Figure 5.
ITM (A)
100
On state characteristics
(maximum values)
10
Tj=125 °C
Tj=25 °C
VTM (V)
1
0
1
2
3
Tj max :
Vto = 0.85 V
Rd = 35 mΩ
4
5
Figure 6. Surge peak on state current versus
number of cycles
100 ITSM(A)
90
80
70
60
50
40
Repetitive
30 TC=88 °C
20
10
0
1
Non repetitive
Tj initial=25°C
10
t=20ms
One cycle
Number of cycles
100
1000
4/9
Doc ID 16487 Rev 2
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