SX1211I084TRT(2007) Просмотр технического описания (PDF) - Semtech Corporation
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Компоненты Описание
производитель
SX1211I084TRT
(Rev.:2007)
(Rev.:2007)
Semtech Corporation
SX1211I084TRT Datasheet PDF : 73 Pages
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ADVANCED COMMUNICATIONS & SENSING
SX1211
2. Electrical Characteristics
2.1. ESD Notice
The SX1211 is a high performance radio frequency device. It satisfies general ESD quality rules, except on pins 3-
4-5-27-28-29-31. It should thus be handled with all the necessary ESD precautions to avoid any permanent
damage.
2.2. Absolute Maximum Ratings
Stresses above the values listed below may cause permanent device failure. Exposure to absolute maximum
ratings for extended periods may affect device reliability.
Table 3: Absolute Maximum Ratings
Symbol
VDDmr
Tmr
Pmr
Description
Supply voltage
Storage temperature
Input level
Min.
-0.3
-55
-
Max.
3.7
125
0
Unit
V
°C
dBm
2.3. Operating Range
Table 4: Operating Range
Symbol
Description
Min.
Max.
VDDop
Supply Voltage
2.1
3.6
Trop
Temperature
-40
+85
ML
Input Level*
-
0
Note: above -10 dBm input power, the receive current can increase over the specification.
Unit
V
°C
dBm
2.4. Chip Specification
Conditions: Temp = 25 °C, VDD = 3.3 V, crystal freq uency = 12.8 MHz, carrier frequency = 869 or 915 MHz,
modulation FSK, data rate = 25 kb/s, Fdev = 50 kHz, fo = 50 kHz, fc-fo = 100 kHz, unless otherwise specified.
2.4.1. Power Consumption
Symbol
Description
Conditions
IDDSL
Supply current in sleep
mode
IDDST
Supply current in standby
mode, CLKOUT disabled
Crystal oscillator running
IDDFS
Supply current in FS mode
Frequency synthesizer
running
IDDR
Supply current in receiver
mode
IDDT
Supply current in
transmitter mode
Output power = 10 dBm
Output power = 1dBm
Table 5: Power Consumption Specification
Min
-
-
-
-
-
-
Typ
Max
Unit
0.3
-
µA
55
80
µA
1.3
1.7
mA
3.0
3.5
mA
25
30
mA
16
21
mA
V3.0 – august 15th, 2007
Page 8 of 73
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