SUP50N03-5M1P Просмотр технического описания (PDF) - Vishay Semiconductors
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SUP50N03-5M1P Datasheet PDF : 7 Pages
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SUP50N03-5m1P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
2.1
TJ = 150 °C
10
TJ = 25 °C
1
1.7
ID = 250 μA
1.3
0.9
0.1
0.0
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
3750
3000
Ciss
2250
1500
Coss
750
Crss
0
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Capacitance
2.0
ID = 20 A
1.7
VGS = 10 V
1.4
VGS = 4.5 V
1.1
0.8
0.5
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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4
0.5
- 50 - 25 0
25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
43
41
ID = 250 μA
39
37
35
33
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
100
80
60
Package Limited
40
20
0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Current Derating
Document Number: 66570
S10-1050-Rev. A, 03-May-10
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