SUP53P06-20-E3 Просмотр технического описания (PDF) - Vishay Semiconductors
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производитель
SUP53P06-20-E3 Datasheet PDF : 6 Pages
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SUP53P06-20
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
ID = 55 A
8
2.0
ID = 20 A
1.7
VDS = 20 V
6
1.4
VDS = 30 V
4
1.1
VGS = 10 V
VGS = 4.5 V
2
0.8
0
0
100
20
40
60
80
Qg - Total Gate Charge (nC)
Gate Charge
0.5
- 50 - 25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
0.10
ID = 20 A
0.08
TJ = 150 °C
TJ = 25 °C
10
1
0.0
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1000
100
10
IAV (A) at TJ = 25 °C
1
IAV (A) at TJ = 150 °C
0.1
0.0001
0.001
0.01
0.1
1
Tin - (s)
Single Pulse Avalanche Current Capability
vs. Time
0.06
0.04
TJ = 150 °C
0.02
TJ = 25 °C
0.00
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
75
ID = 10 mA
72
69
66
63
60
- 50 - 25 0 25 50 75 100 125 150
TJ - Temperature (°C)
Drain-Source Breakdown Voltage vs. Junction
Temperature
www.vishay.com
4
Document Number: 68633
S-80897-Rev. A, 21-Apr-08
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