SUM110N04-03 Просмотр технического описания (PDF) - Vishay Semiconductors

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SUM110N04-03

N-Channel 40-V (D-S) 200°C MOSFET

Vishay Semiconductors 

SUM110N04-03

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Junction Temperature

2.1

100

VGS = 10 V

1.8

ID = 30 A

1.5

1.2

10

0.9

0.6

0.3

0.0

1

- 50 - 25 0 25 50 75 100 125 150 175 200

0

TJ - Junction Temperature (_C)

Source-Drain Diode Forward Voltage

TJ = 150_C

TJ = 25_C

0.3

0.6

0.9

1.2

VSD - Source-to-Drain Voltage (V)

1000

Avalanche Current vs. Time

100

IAV (A) @ TA = 25_C

10

IAV (A) @ TA = 150_C

1

0.1

0.00001 0.0001 0.001 0.01

0.1

1

tin (Sec)

Drain Source Breakdown vs.

Junction Temperature

56

52

ID = 10 mA

48

44

40

- 50 - 25 0 25 50 75 100 125 150 175 200

TJ - Junction Temperature (_C)

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4

Document Number: 71745

S-31061—Rev. C, 26-May-03

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