STX13005-AP(2001) Просмотр технического описания (PDF) - STMicroelectronics
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STX13005-AP Datasheet PDF : 8 Pages
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STX13005 / STX13005-AP
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
44.6
°C/W
Max
150
°C/W
ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
ICES
Collector Cut-off
Current (VBE = 0)
VCE = 700 V
VCE = 700 V
Tj = 100 °C
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 400 V
V(BR)EBO Emitter-Base
IE = 10 mA
9
Breakdown Voltage
(IC = 0)
VCEO(sus)* Collector-Emitter
IC = 10 mA
400
Sustaining Voltage
(IB = 0)
VCE(sat)* Collector-Emitter
Saturation Voltage
IC = 1 A
IC = 2 A
IC = 3 A
IB = 200 mA
IB = 500 mA
IB = 750 mA
VBE(sat)* Base-Emitter
Saturation Voltage
IC = 1 A
IC = 2 A
IB = 200 mA
IB = 500 mA
hFE* DC Current Gain
IC = 1 A
VCE = 5 V
10
IC = 2 A
VCE = 5 V
8
RESISTIVE LOAD
ts
Storage Time
tf
Fall Time
IC = 2 A
IB1 = -IB2 = 400 mA
(See Figure 1)
VCC = 125 V
tp = 30 µs
INDUCTIVE LOAD
IC = 1 A
ts
Storage Time
IB1 = 200 mA
tf
Fall Time
L = 50 mH
(See Figure 2)
Vclamp = 300 V
VBE(off) = -5 V
RBB = 0
* Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 %.
Typ.
1.65
260
0.8
150
Max.
1
5
1
18
0.5
0.6
5
1.2
1.6
30
24
Unit
mA
mA
mA
V
V
V
V
V
V
V
µs
ns
µs
ns
2/8
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