STTH806G Просмотр технического описания (PDF) - STMicroelectronics
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STTH806G Datasheet PDF : 9 Pages
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Characteristics
STTH806
Figure 7. Softness factor versus
dIF/dt (typical values)
S factor
2.00
1.80
1.60
IF ≤ 2 x IF(AV)
VR = 400 V
Tj = 125° C
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0.00
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 8.
Relative variations of dynamic
parameters versus junction
temperature
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
25
S factor
IF=IF(AV)
VR=400V
Reference: Tj=125°C
IRM
QRR
Tj(°C)
50
75
100
125
Figure 9. Transient peak forward voltage
versus dIF/dt (typical values)
14 VFP(V)
IF=IF(AV)
12
Tj=125°C
10
8
6
4
2
dIF/dt(A/µs)
0
0
100
200
300
400
500
Figure 11. Junction capacitance versus
reverse voltage applied
(typical values)
C(pF)
100
F=1MHz
VOSC=30mVRMS
Tj=25°C
10
VR(V)
1
1
10
100
1000
Figure 10. Forward recovery time versus
dIF/dt (typical values)
200 tfr(ns)
180
160
140
120
100
80
60
40
20
0
0
100
IF=IF(AV)
VFR=1.1 x VF max.
Tj=125°C
dIF/dt(A/µs)
200
300
400
500
Figure 12.
Thermal resistance junction to
ambient versus copper surface
under tab (printed circuit board
FR4, eCU = 35 µm)
80 Rth(j-a)(°C/W)
D²PAK
70
60
50
40
30
20
10
S(Cu)(cm²)
0
0
5
10
15
20
25
30
35
40
4/9
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