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STTH806 Просмотр технического описания (PDF) - STMicroelectronics

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STTH806 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Characteristics
1
Characteristics
STTH806
Table 2. Thermal parameters
Symbol
Parameter
Rth(j-c)
Junction to case
TO-220AC, D2PAK
TO-220AC Ins
Value
2.5
4
Unit
° C/W
Table 3. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ Max. Unit
IR(1) Reverse leakage current
VF(2) Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
Tj = 25° C
Tj = 150° C
Tj = 25° C
Tj = 150° C
VR = VRRM
IF = 8 A
8
µA
20
200
1.85
V
1.10 1.40
To evaluate the conduction losses use the following equation:
P = 1.07 x IF(AV) + 0.041 IF2(RMS)
Table 4.
Symbol
trr
IRM
tfr
VFP
Dynamic characteristics
Parameter
Test conditions
Reverse recovery time
Reverse recovery current
Forward recovery time
Forward recovery voltage
IF = 0.5 A, Irr = 0.25 A, IR = 1 A,
Tj = 25° C
IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25° C
IF = 8 A, dIF/dt = -100 A/µs,
VR = 400 V, Tj = 25° C
IF = 8 A dIF/dt = 100 A/µs
VFR = 1.1 x VFmax, Tj = 25° C
IF = 8 A dIF/dt = 100 A/µs
VFR = 1.1 x VFmax, Tj = 25° C
Min. Typ Max. Unit
35
ns
40 55
4.5 6.5
200 ns
3.5
V
2/9

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