STPS40170CG(2018) Просмотр технического описания (PDF) - STMicroelectronics

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Компоненты Описание

производитель

STPS40170CG
(Rev.:2018)

170 V power Schottky rectifier

STMicroelectronics 

STPS40170C

Characteristics (curves)

Figure 5. Reverse leakage current versus reverse voltage

applied (typical values, per diode)

Figure 6. Junction capacitance versus reverse voltage

applied (typical values, per diode)

1.E+05 I R (µA)

1.E+04

1.E+03

1.E+02

1.E+01

Tj = 150 °C

Tj = 125 °C

Tj = 100 °C

Tj = 75 °C

Tj = 50 °C

C(pF)

1000

100

1.E+00

Tj = 25 °C

1.E-01

VR(V)

10

0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170

1

10

F = 1 MHz

VOSC = 30 mVRMS

Tj = 25 °C

VR(V)

100

1000

Figure 7. Forward voltage drop versus forward current

(per diode)

IF (A)

100.0

Tj = 125 °C

(maximum values)

10.0

Tj = 125 °C

(typical values)

Tj = 25 °C

1.0

(maximum values)

0.1

0.0 0.1

VF(V)

0.2 0.3 0.4 0.5 0.6 0.7

0.8 0.9 1.0

1.1 1.2

Figure 8. Thermal resistance junction to ambient versus

copper surface under tab

80 Rth(j-a) (°C/W)

70

60

D²PAK

Epoxy printed board FR4, copper thickness = 35 µm

50

40

30

20

10

0

0

SCu(cm²)

5

10

15

20

25

30

35

40

DS4412 - Rev 2

page 4/15

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