STPS40170CG(2018) Просмотр технического описания (PDF) - STMicroelectronics
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STPS40170CG Datasheet PDF : 15 Pages
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STPS40170C
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1. Average forward power dissipation versus
average forward current (per diode)
PF(AV)(W)
22
20
δ=0.05
δ=0.1
δ=0.2
δ=0.5
δ=1.0
18
16
14
12
10
8
6
T
4
2
IF(AV)(A)
δ = tp/TIF(AV)(tAp)
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28
Figure 2. Average forward current versus ambient
temperature (δ = 0.5, per diode)
22 IF(AV)(A)
20
18
16
14
12
10
8
6
4
2
0
0
25
50
75
100
125
150
175
Figure 3. Normalized avalanche power derating versus
pulse duration (Tj = 125 °C)
PARM (t p )
1 PARM(10 µs)
0.1
0.01
0.001
1
t p(µs)
10
100
1000
Figure 4. Relative variation of thermal impedance junction
to case versus pulse duration
Z th(j-c) / R th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Single pulse
0.0
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
DS4412 - Rev 2
page 3/15
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