STPS4045CW Просмотр технического описания (PDF) - STMicroelectronics

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STPS4045CW

Power Schottky rectifiers

STMicroelectronics 

Characteristics

1

Characteristics

STPS4045C

Table 2. Absolute ratings (limiting values, per diode)

Symbol

Parameter

VRRM Repetitive peak reverse voltage

IF(RMS) Forward rms current

IF(AV) Average forward current

TO-247

TC = 150 °C, δ = 0.5

TC = 145 °C, δ = 0.5

TC = 145 °C, δ = 0.5

TO-220AB

TC = 130 °C, δ = 0.5

Per diode

Per device

Per diode

Per device

IFSM Surge non repetitive forward current

tp = 10 ms sinusoidal

IRRM Repetitive peak reverse current

tp = 2 µs square F=1 kHz

IRSM Non repetitive peak reverse current

tp = 100 µs square

PARM Repetitive peak avalanche power

tp = 1 µs Tj = 25 °C

Tstg Storage temperature range

Tj Maximum operating junction temperature(1)

dV/dt Critical rate of rise reverse voltage

1.

dPtot

dTj

<1

Rth(j-a)

condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal resistances

Symbol

Parameter

Rth (j-c) Junction to case

Rth (c) Coupling

TO-247

TO-220AB

TO-247

TO-220AB

Per diode

Total

Per diode

Total

Value

45

30

20

40

20

40

220

1

3

6000

-65 to + 175

175

10000

Unit

V

A

A

A

A

A

A

W

°C

°C

V/µs

Value

1.5

0.8

1.8

1.3

0.1

0.8

Unit

°C/W

When the diodes 1 and 2 are used simultaneously :

ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

2/8

Doc ID 4605 Rev 5

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