STPS30170CG-TR Просмотр технического описания (PDF) - STMicroelectronics
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STPS30170CG-TR Datasheet PDF : 9 Pages
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STPS30170C
Figure 1: Average forward power dissipation
versus average forward current (per diode)
PF(AV)(W)
14
12
10
d=0.1
d=0.2
d=0.5
d=1
d=0.05
8
6
4
T
2
IF(AV)(A)
d=tp/T
tp
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Figure 3: Normalized avalanche power
derating versus pulse duration
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
100
1000
Figure 2: Average forward current versus
ambient temperature (δ = 0.5, per diode)
IF(AV)(A)
18
16
Rth(j-a)=Rth(j-c) (TO-220AB, TO -247 & D²PAK)
14
12
Rth(j-a)=Rth(j-c)
(TO-220FPAB)
10
8
Rth(j-A)=15 °C/W
6
4
T
2
d=tp/T
0
0
25
tp
50
Tamb(°C)
75
100
125
150
175
Figure 4: Normalized avalanche power
derating versus junction temperature
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
25
50
Tj(°C)
75
100
125
150
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220AB, TO-247, D2PAK)
IM(A)
225
200
175
150
125
100
75
50
IM
25
0
1.E-03
t
d =0.5
1.E-02
TO-220AB, TO -247 & D²PAK
t(s)
1.E-01
TC=50°C
TC=75°C
TC=125°C
1.E+00
Figure 6: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220FPAB)
IM(A)
140
130
120
110
100
90
80
70
60
50
40
30
IM
20
10
0
1.E-03
t
d =0.5
1.E-02
TO-220FPAB
t(s)
1.E-01
TC=50°C
TC=75°C
TC=125°C
1.E+00
3/9
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