STPS30170C Просмотр технического описания (PDF) - STMicroelectronics
Номер в каталоге
Компоненты Описание
производитель
STPS30170C Datasheet PDF : 9 Pages
| |||
STPS30170C
Table 3: Absolute Ratings (limiting values, per diode)
Symbol
Parameter
Value
VRRM Repetitive peak reverse voltage
170
IF(RMS) RMS forward current
30
TO-220FPAB Tc = 120 °C Per diode
IF(AV)
Average forward current TO-220AB /
δ = 0.5
D2PAK
Tc = 155 °C
15
TO-247
Per device
30
IFSM Surge non repetitive forward current
tp = 10ms sinusoidal
220
PARM Repetitive peak avalanche power
tp = 1µs Tj = 25 °C
10500
Tstg Storage temperature range
-65 to + 175
Tj Maximum operating junction temperature *
175
dV/dt Critical rate of rise of reverse voltage
10000
*:
d----P-----t--o----t
dTj
>
-R----t--h----(-1--j--–-----a----)
thermal runaway condition for a diode on its own heatsink
Unit
V
A
A
A
W
°C
°C
V/µs
Table 4: Thermal Parameters
Symbol
Parameter
TO-220FPAB
Rth(j-c) Junction to case
TO-220AB / D2PAK
TO-247
TO-220FPAB
Rth(c)
TO-220AB / D2PAK
TO-247
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Per diode
Total
Per diode
Total
Per diode
Total
Coupling
Coupling
Coupling
Value
4
3.3
1.6
0.85
1.5
0.8
2.6
0.3
0.3
Unit
°C/W
°C/W
Table 5: Static Electrical Characteristics (per diode)
Symbol
Parameter
Tests conditions
IR *
Tj = 25 °C
Reverse leakage current
Tj = 125 °C
VR = VRRM
VF ** Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
IF = 15 A
IF = 30 A
Min. Typ
5
0.69
0.80
Pulse test:
* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.64 x IF(AV) + 0.0073 IF2(RMS)
Max.
20
20
0.92
0.75
1
0.86
2/9
Unit
µA
mA
V
Share Link: 