STPS30170CW(2017) Просмотр технического описания (PDF) - STMicroelectronics
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STPS30170CW Datasheet PDF : 13 Pages
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Characteristics
1.1
Characteristics (curves)
STPS30170C
Figure 1: Average forward power dissipation
versus average forward current (per diode)
PF(AV)(W )
14
=0.1
=0.2
=0.5
=1
12
=0.05
10
8
6
4
T
2
IF( AV) (A)
=tp/T
tp
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Figure 2: Average forward current versus ambient
temperature (δ = 0.5, per diode)
IF(AV)(A)
18
16
14
12
10
8
Rth(j-a)=15 °C/W
6
4
T
2
=tp/T
tp
0
0
25
50
Tamb(°C)
75
100
125
150
175
Figure 3: Normalized avalanche power derating
versus pulse duration (Tj = 125 °C)
PARM(t p )
1 PARM(10 µs)
0.1
0.01
0.001
1
t p(µs)
10
100
1000
Figure 4: Relative variation of thermal impedance
junction to case versus pulse duration (D²PAK and
TO-247)
Zth(j-c) /Rth(j-c)
1.0
0.9
0.8
0.7
=0.5
0.6
0.5
0.4 =0.2
0.3 =0.1
T
0.2
0.1 Single pulse
0.0
1.E-03
1.E-02
tP(s)
1.E-0
=tp/T
tp
1.E+00
Figure 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode)
IR(µA)
1.E+06
1.E+05
1.E+04
1.E+03
Tj=175°C
Tj=150°C
Tj=125°C
1.E+02
Tj=75°C
1.E+01
1.E+00
Tj=25°C
1.E-01
VR(V)
0 10 20 30 40 50 60 70 80 90 10 0 11 0 12 0 13 0 140 15 0 16 0 170
Figure 6: Junction capacitance versus reverse
voltage applied (typical values, per diode)
C(pF)
1000
F=1MHz
VOSC =30mVRMS
Tj=25°C
100
10
1
VR(V)
10
100
1000
4/13
DocID11640 Rev 2
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