DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

STPS30170CG-TR(2017) Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге
Компоненты Описание
производитель
STPS30170CG-TR
(Rev.:2017)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STPS30170CG-TR Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
STPS30170C
Symbol
IR(1)
VF(2)
Characteristics
Table 4: Static electrical characteristics (per diode)
Parameter
Test conditions
Min. Typ. Max. Unit
Reverse leakage current
Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = VRRM
IF = 15 A
IF = 30 A
-
20 µA
-
5
20 mA
-
0.92
- 0.69 0.75
V
-
1
-
0.8 0.86
Notes:
(1)Pulse test: tp = 5 ms, δ < 2%
(2)Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.64 x IF(AV) + 0.0073 IF2(RMS)
DocID11640 Rev 2
3/13

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]