STPS30170CW(2017) Просмотр технического описания (PDF) - STMicroelectronics

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Компоненты Описание

производитель

STPS30170CW
(Rev.:2017)

High voltage power Schottky rectifier

STMicroelectronics 

Characteristics

STPS30170C

1

Characteristics

Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

IF(RMS)

IF(AV)

IFSM

PARM

Tstg

Tj

Repetitive peak reverse voltage

Forward rms current

Average forward current

δ = 0.5, square wave

TC = 150 °C

Per diode

Per device

Surge non repetitive

forward current

tp = 10 ms sinusoidal

Repetitive peak

avalanche power

tp = 10 µs, Tj = 125 °C

Storage temperature range

Maximum operating junction temperature (1)

170

V

30

A

15

A

30

220

A

750

W

-65 to +175

°C

+175

°C

Notes:

(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Symbol

Rth(j-c)

Rth(c)

Junction to case

Coupling

Table 3: Thermal parameter

Parameter

D2PAK

TO-247

Per diode

D2PAK

TO-247

Total

D2PAK

TO-247

Coupling

Max. value

1.6

1.5

0.95

0.9

0.3

Unit

°C/W

°C/W

When the diodes 1 and 2 are used simultaneously:

ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)

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