STPS30120C Просмотр технического описания (PDF) - STMicroelectronics
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STPS30120C Datasheet PDF : 8 Pages
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STPS30120C
Characteristics
Table 4. Static electrical characteristics (per diode)
Symbol
Test conditions
Min. Typ. Max. Unit
IR(1) Reverse leakage current
Tj = 25 °C
VR = VRRM
Tj = 125 °C
Tj = 25 °C IF = 5 A
Tj = 125 °C
VF(2) Forward voltage drop
Tj = 25 °C
Tj = 125 °C IF = 15 A
Tj = 25 °C
IF = 30 A
Tj = 125 °C
1. Pulse test : tp = 5 ms, δ < 2%
2. Pulse test : tp = 380 μs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.59 x IF(AV) + 0.01 IF2(RMS)
15
µA
2.5
7.5
mA
0.74
0.57 0.61
0.92
V
0.7
0.74
1.02
0.83 0.89
Figure 2.
Average forward power
Figure 3.
dissipation versus average forward
current (per diode)
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
PF(AV)(W)
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
2
δ = 0.1 δ = 0.2
δ = 0.05
δ = 0.5
δ=1
T
IF(AV)(A)
δ=tp/T
tp
4
6
8
10
12
14
16
18
IF(AV)(A)
18
16
14
12
10
8
6
4
T
2
δ=tp/T
0
0
25
tp
50
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
Tamb(°C)
75
100
125
150
175
Figure 4. Normalized avalanche power
derating versus pulse duration
Figure 5.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1µs)
1
PARM(Tj)
1.2 PARM(25 °C)
1
0.1
0.8
0.6
0.01
0.4
0.2
0.001
tp(µs)
0
Tj(°C)
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
Doc ID 11213 Rev 3
3/8
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