STPS3045C-Y Просмотр технического описания (PDF) - STMicroelectronics
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STPS3045C-Y Datasheet PDF : 7 Pages
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Characteristics
STPS3045C-Y
Figure 7.
Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
IR(µA)
1.E+05
1.E+04
1.E+03
1.E+02
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
1.E+01
Tj=25°C
1.E+00
1.E-01
0
VR(V)
5
10
15
20
25
30
35
40
45
Figure 8.
Junction capacitance versus
reverse voltage applied
(typical values, per diode)
C(nF)
10000
F=1MHz
VOSC=30mVRMS
Tj=25°C
1000
VR(V)
100
1
10
100
Figure 9.
IFM(A)
1000
Forward voltage drop versus
forward current
(maximum values, per diode)
100
10
Tj=125°C
(typical values)
Tj=125°C
(maximum values)
Tj=25°C
(maximum values)
VFM(V)
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Figure 10. Thermal resistance junction to
ambient versus copper surface
under tab
Rth(j-a)(°C/W)
80
70
Epoxy printed circuit board,
copper thickness = 35 µm
60
50
40
30
20
10
S(cm²)
0
1.8
0
5
10
15
20
25
30
35
40
4/7
Doc ID 17264 Rev 1
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