STPS30150 Просмотр технического описания (PDF) - STMicroelectronics

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STPS30150

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

STMicroelectronics 

STPS30150CT/CW/CFP

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values, per diode).

Fig. 8: Junction capacitance versus reverse voltage

applied (typical values, per diode).

IR(µA)

1E+5

1E+4

1E+3

1E+2

1E+1

1E+0

1E-1

0

25

Tj=175°C

Tj=150°C

Tj=125°C

Tj=100°C

C(pF)

1000

100

Tj=25°C

50

75

VR(V)

100 125 150

10

12

F=1MHz

Tj=25°C

VR(V)

5 10 20

50 100 200

Fig. 9: Forward voltage drop versus forward

current (maximum values, per diode).

IFM(A)

100.0

10.0

Tj=125°C

Typical values

Tj=125°C

Tj=25°C

1.0

VFM(V)

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

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