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STPS2545CT-Y Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге
Компоненты Описание
производитель
STPS2545CT-Y
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STPS2545CT-Y Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
STPS2545CT-Y
Characteristics
Figure 1. Conduction losses versus average Figure 2. Average forward current versus
current
ambient temperature (δ = 0.5)
PF(AV)(W)
10
9
8
7
δ = 0.05 δ = 0.1 δ = 0.2
δ = 0.5
δ=1
IF(AV)(A)
14
12
10
Rth(j-a)=Rth(j-c)
6
8
5
4
6
Rth(j-a)=50°C/W
3
4
2
T
T
2
1
0
IF(AV)(A)
δ=tp/T
tp
0 δ=tp/T
tp
Tamb(°C)
0.0
2.5
5.0
7.5
10.0
12.5
15.0
0
25
50
75
100
125
150
175
Figure 3. Normalized avalanche power
derating versus pulse duration
PARM(tp)
PARM(1 µs)
1
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(Tj)
PARM(25 °C)
1.2
1
0.1
0.8
0.6
0.01
0.4
0.001
tp(µs)
0.2
Tj(°C)
0
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
Figure 5.
Non repetitive surge peak forward
current versus overload duration
(maximum values)
IM(A)
200
180
160
140
120
100
80
60
40
IM
20
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
TC=25°C
TC=75°C
TC=125°C
1.E+00
Figure 6.
Relative variation of thermal
impedance junction to case versus
pulse duration
Zth(j-c) / Rth(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4 δ = 0.2
0.3 δ = 0.1
0.2
Single pulse
0.1
0.0
1.E-03
1.E-02
tP(s)
T
1.E-01
δ=tp/T
tp
1.E+00
Doc ID 18183 Rev 2
3/7

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