D95N04 Просмотр технического описания (PDF) - STMicroelectronics

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производитель

D95N04

N-channel 40V - 5.4mΩ - 80A - DPAK - TO-220 STripFET™ Power MOSFET

STMicroelectronics 

STD95N04 - STP95N04

Electrical characteristics

Table 5. Switching on/off (inductive load)

Symbol

Parameter

Test conditions

td(on)

tr

Turn-on delay time

Rise time

td(off)

tf

Turn-off delay time

Falltime

VDD=20V, ID= 40A,

RG=4.7Ω, VGS=10V

(see Figure 15)

VDD=20V, ID= 40A,

RG=4.7Ω, VGS=10V

(see Figure 15)

Min. Typ. Max. Unit

15

ns

50

ns

40

ns

15

ns

Table 6.

Symbol

Source drain diode

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=80A, VGS=0

ISD=80A,

di/dt = 100A/µs,

VDD=30V, Tj=150°C

(see Figure 14)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Min. Typ. Max. Unit

80 A

320 A

1.5 V

45

ns

60

nC

2.8

A

5/14

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