B60NF10 Просмотр технического описания (PDF) - STMicroelectronics

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производитель

B60NF10

N-channel 100V - 0.019Ω - 80A - TO-220 - D2PAK - I2PAK STripFET™ II Power MOSFET

STMicroelectronics 

STB60NF10 - STB60NF10 -1 - STP60NF10

Electrical characteristics

Table 5. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Test conditions

VDD= 50V, ID= 40A,

RG=4.7Ω, VGS=10V

Figure 13 on page 8

Min. Typ. Max. Unit

17

ns

56

ns

82

ns

23

ns

Table 6. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM(1)

VSD(2)

trr

Qrr

IRRM

Source-drain current

Source-drain current (pulsed)

Forward on voltage

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 80A, VGS = 0

ISD = 80A,

di/dt = 100A/µs,

VDD = 25V, TJ = 150°C

Figure 15 on page 8

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min Typ. Max Unit

80 A

320 A

1.3 V

92

ns

340

nC

7.4

A

5/15

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