B60NF10 Просмотр технического описания (PDF) - STMicroelectronics

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производитель

B60NF10

N-channel 100V - 0.019Ω - 80A - TO-220 - D2PAK - I2PAK STripFET™ II Power MOSFET

STMicroelectronics 

Electrical characteristics

STB60NF10 - STB60NF10 -1 - STP60NF10

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3. On/off states

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250µA, VGS= 0

100

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125°C

1 µA

10 µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20V

±100 nA

VGS(th) Gate threshold voltage

VDS= VGS, ID = 250µA

2

3

4

V

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 40A

0.019 0.023 Ω

Table 4. Dynamic

Symbol

Parameter

Test conditions

gfs (1) Forward transconductance VDS = 25V, ID = 40A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f = 1 MHz,

VGS = 0

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 50V, ID = 80A

VGS =10V

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min. Typ. Max. Unit

78

S

4270

pF

470

pF

140

pF

104

nC

20

nC

32

nC

4/15

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