16NF25 Просмотр технического описания (PDF) - STMicroelectronics

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16NF25

N-channel 250V - 0.195Ω- 13A - DPAK/TO-220/TO-220FP Low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

STD16NF25 - STF16NF25 - STP16NF25

Electrical characteristics

Table 7. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

trr

Qrr

IRRM

trr

Qrr

IRRM

Source-drain current

Source-drain current

(pulsed)

Forward on voltage

ISD = 13A, VGS = 0

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 13A,

di/dt = 100A/µs,

VDD = 60V

(see Figure 20)

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 13A,

di/dt = 100A/µs,

VDD = 60V, Tj = 150°C

(see Figure 20)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Min. Typ. Max. Unit

13

A

52

A

1.6 V

133

ns

651

µC

10

A

157

ns

895

µC

11

A

5/16

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