16NF25 Просмотр технического описания (PDF) - STMicroelectronics
Номер в каталоге
Компоненты Описание
производитель
16NF25
STMicroelectronics
16NF25 Datasheet PDF : 16 Pages
| |||
STD16NF25 - STF16NF25 - STP16NF25
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID
ID
IDM(2)
Ptot
dv/dt (3)
Drain-source voltage (VGS = 0)
Gate- source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating Factor
Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1s;TC=25°C)
Tstg
Storage temperature
Tj
Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area.
3. ISD ≤ 13A, di/dt ≤ 300A/µs, VDD ≤ 80% V(BR)DSS, Tj ≤ TJMAX
Value
DPAK
TO-220
TO-220FP
250
13
8.19
52
± 20
13(1)
8.19(1)
52(1)
90
25
0.72
0.2
15
--
2500
-55 to 150
Unit
V
V
A
A
A
W
W/°C
V/ns
V
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-pcb Thermal resistance junction to pcb max
Rthj-amb Thermal resistance junction-ambient max
TJ
Maximum lead temperature for soldering
purpose
Value
TO-220 DPAK TO-220FP
1.39
5
--
50
--
62.5 100
62.5
300
Unit
°C/W
°C/W
°C/W
°C
Table 4. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAR
(pulse width limited by Tj Max)
Single pulse avalanche energy
EAS (starting Tj=25°C, Id= 13A, Vdd=50V)
Value
13
100
Unit
A
mJ
3/16
Share Link: