P10NK70Z Просмотр технического описания (PDF) - STMicroelectronics
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P10NK70Z
STMicroelectronics
P10NK70Z Datasheet PDF : 13 Pages
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STP10NK70Z - STP10NK70ZFP
2 Electrical characteristics
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
V(BR)DSS
Drain-Source Breakdown
Voltage
IDSS
Zero Gate Voltage Drain
Current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate Body Leakage Current
(VDS = 0)
Gate Threshold Voltage
Static Drain-Source On
Resistance
Test Conditions
ID = 1mA, VGS= 0
VDS = Max Rating,
VDS = Max Rating,Tc = 125°C
VGS = ±20V, VDS = 0
VDS= VGS, ID = 100 µA
VGS= 10 V, ID= 4.5 A
Min.
700
3
Typ.
3.75
0.75
Max.
1
50
±10
4.5
0.85
Unit
V
µA
µA
µA
V
Ω
Table 5. Dynamic
Symbol
Parameter
Test Conditions
gfs Note 4
Ciss
Coss
Crss
Coss eq.
Note 5
Qg
Qgs
Qgd
Forward Transconductance VDS =15V, ID = 4.5A
Input Capacitance
Output Capacitance
VDS =25V, f=1 MHz, VGS=0
Reverse Transfer Capacitance
Equivalent Ouput Capacitance VGS=0, VDS =0V to 560V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=560V, ID = 9 A
VGS =10V
(see Figure 17)
Min. Typ. Max. Unit
7.7
S
2000
pF
190
pF
41
pF
98
pF
64
90
nC
12
nC
33
nC
Table 6. Switching times
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
td(off)
tf
tr(Voff)
tf
tc
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD=350 V, ID=4.5 A,
RG=4.7Ω, VGS=10V
(see Figure 18)
VDD=350 V, ID=4.5A,
RG=4.7Ω, VGS=10V
(see Figure 18)
VDD=560 V, ID=9A,
RG=4.7Ω, VGS=10V
(see Figure 18)
Min. Typ. Max. Unit
22
ns
19
ns
46
ns
19
ns
11
ns
10
ns
22
ns
3/13
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