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STLVDS32BDR Просмотр технического описания (PDF) - STMicroelectronics

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производитель
STLVDS32BDR
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STLVDS32BDR Datasheet PDF : 17 Pages
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STLVDS32B
Electrical characteristics
Table 7.
Symbol
Switching characteristics
(Over recommended operating conditions unless otherwise noted. All typical values are at
TA = 25°C, and VCC = 3.3 V).
Parameter
Test conditions
Min. Typ. Max. Unit
tPLH
Propagation delay time, low to
high output
tPHL
Propagation delay time, high to
low output
1.5 2.5 3.3
ns
1.5 2.5 3.3
ns
tr
Output signal rise time
0.4
ns
tf
t(s) tsk(O)
c tsk(P)
du tsk(PP)
Pro tPZH
lete tPZL
so tPHZ
- Ob tPLZ
Output signal fall time
CL = 10 pF, Figure 3.
Channel to channel output skew
(Note: 1)
Pulse skew (|tPHL - tPLH|) (Note 2)
Part to part skew (Note 3)
Propagation delay time, high
impedance to high level output
Propagation delay time, high
impedance to low level output
Propagation delay time, high level
to high impedance output
Figure 4.
Propagation delay time, low level
to high impedance output
0.4
ns
0.1 0.3
ns
0.2 0.4
ns
1
ns
3
12
ns
5
12
ns
5
12
ns
5
12
ns
t(s) Note: 1 tsk(O) is the maximum delay time difference between the propagation delay of one channel
c and that of the others on the same chip with any event on the inputs.
du 2 tsk(P) is the magnitude difference in differential propagation delay time between the positive
ro going edge and the negative going edge of the same channel.
P 3 tsk(PP) is the differential channel-to-channel skew of any event between devices. This
specification applies to devices at the same VCC, and within 5°C of each other within the
Obsoleteoperating temperature range
7/17

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