K822 Просмотр технического описания (PDF) - STMicroelectronics
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K822 Datasheet PDF : 15 Pages
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STK822
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS
VGS (1)
VGS(2)
ID (4)
ID (4)
IDM (3)
PTOT (4)
Drain-source voltage (VGS = 0)
Gate-source voltage
Gate-source voltage
Drain current (continuous) at TA = 25 °C
Drain current (continuous) at TA = 100 °C
Drain current (pulsed)
Total dissipation at TA = 25 °C
Derating factor
EAS (5) Single pulse avalanche energy
Tj
Operating junction temperature
Tstg
Storage temperature
1. Continuous mode
2. Guaranteed for test time ≤ 15 ms
3. Pulse width limited by package
4. When mounted on FR-4 board of 1inch2 , 2 oz Cu and ≤ 10 sec
5. Starting Tj = 25 °C, ID = 19 A, VDD = 25 V
Value
25
± 16
± 18
38
23.75
152
5.2
0.0416
500
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
Table 3. Thermal data
Symbol
Parameter
Typ.
Rthj-amb(1) Thermal resistance junction-amb
20
Rthj-c(2) Thermal resistance junction-case (top drain)
0.8
Rthj-c(3) Thermal resistance junction-case (source)
2.2
1. When mounted on FR-4 board of 1inch2 , 2 oz Cu and ≤10 sec
2. Steady state
3. Measured at Source pin when the device is mounted on FR-4 board in steady state
Max.
24
1
2.7
Unit
°C/W
°C/W
°C/W
3/15
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