11E1 Просмотр технического описания (PDF) - Nihon Inter Electronics

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производитель

11E1

DIODE Type

Nihon Inter Electronics 

ｓ

DIODE Type : 11E1

FEATURES

* Miniature Size

* Low Forward Voltage drop

* Low Reverse Leakage Current

* High Surge Capability

* 26mm and 52mm Inside Tape Spacing Package

Available

OUTLINE DRAWING

Maximum Ratings

Approx Net Weight:0.21g

Rating

Symbol

11E1

Unit

Repetitive Peak Reverse Voltage

VRRM

100

V

Non-repetitive Peak Reverse Voltage

VRSM

250

V

Average Rectified Output Current

IO

1.0

Ta=40°C

50Hz Half Sine

Wave Resistive Load

A

RMS Forward Current

IF(RMS)

1.57

A

Surge Forward Current

IFSM

45

50Hz Half Sine Wave,1cycle,

Non-repetitive

A

Operating JunctionTemperature Range Tjw

- 40 to + 150

°C

Storage Temperature Range

Tstg

- 40 to + 150

°C

Electrical • Thermal Characteristics

Characteristics

Peak Reverse Current

Peak Forward Voltage

Thermal Resistance

Symbol

Conditions

IRM Tj= 25°C, VRM= VRRM

VFM Tj= 25°C, IFM= 1.0A

Rth(j-a) Junction to Ambient

Min. Typ. Max.

- - 50

- - 1.0

- - 120

Unit

µA

V

°C/W

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