STGP10NB60S Просмотр технического описания (PDF) - STMicroelectronics

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STGP10NB60S

N-CHANNEL 10A - 600V - TO-220/TO-220FP/D²PAK PowerMESH™ IGBT

STMicroelectronics 

STGP10NB60S - STGP10NB60SFP - STGB10NB60S

ELECTRICAL CHARACTERISTICS (CONTINUED)

Table 7: Dynamic

Symbol

Parameter

Test Conditions

gfs (1) Forward Transconductance VCE = 25 V , IC = 10 A

Cies

Input Capacitance

VCE = 25 V, f= 1 MHz, VGE = 0

Coes

Output Capacitance

Cres

Reverse Transfer

Capacitance

Qg

Total Gate Charge

VCE = 400 V, IC = 10 A,

VGE = 15 V

(see Figure 20)

ICL

Latching Current

Vclamp = 480 V , Tj = 150°C

RG = 1 kΩ

Min.

20

Table 8: Switching On

Symbol

Parameter

td(on)

tr

Turn-on Delay Time

Current Rise Time

(di/dt)on

Eon (1)

Turn-on Current Slope

Turn-on Switching Losses

Test Conditions

VCC = 480 V, IC = 10 A RG=1KΩ

VGE = 15 V

(see Figure 18)

VCC= 480 V, IC = 10 A RG=1KΩ

VGE =15 V,Tj = 125°C

Min.

Table 9: Switching Off

Symbol

Parameter

Test Conditions

tc

tr(Voff)

tf

Cross-Over Time

Off Voltage Rise Time

Current Fall Time

Vcc = 480 V, IC = 10 A,

RG = 10 Ω , VGE = 15 V

TJ = 25 °C

(see Figure 18)

Eoff (**) Turn-off Switching Loss

tc

tr(Voff)

tf

Cross-Over Time

Off Voltage Rise Time

Current Fall Time

Vcc = 480 V, IC = 10 A,

RG = 10 Ω , VGE = 15 V

TJ = 125 °C

(see Figure 18)

Eoff (**) Turn-off Switching Loss

(1)Pulse width limited by max. junction temperature.

(**)Losses Include Also the Tail ( Jedec Standardization)

Min.

Typ.

7

610

65

12

33

Max. Unit

S

pF

pF

pF

nC

A

Typ.

0.7

0.46

Max. Unit

µs

µs

8

A/µs

0.6

mJ

Typ.

2.2

1.2

1.2

5.0

3.8

1.2

1.9

8.0

Max.

Unit

µs

µs

µs

mJ

µs

µs

µs

mJ

3/13

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