STGP10NB60S Просмотр технического описания (PDF) - STMicroelectronics
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STGP10NB60S Datasheet PDF : 13 Pages
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STGP10NB60S - STGP10NB60SFP - STGB10NB60S
Table 3: Absolute Maximum ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage (VGS = 0)
VECR
Reverse Battery Protection
VGE
Gate-Emitter Voltage
IC
Collector Current (continuous) at 25°C
IC
Collector Current (continuous) at 100°C
ICM (1) Collector Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VISO
Insulation Withstand Voltage A.C.(t=1sec, Tc=25°C)
Tstg
Storage Temperature
Tj
Operating Junction Temperature
(1)Pulse width limited by max. junction temperature.
Value
TO-220/D²PAK
600
20
± 20
20
10
80
80
0.64
--
TO-220FP
25
0.20
2500
– 55 to 150
Table 4: Thermal Data
Min. Typ. Max.
Rthj-case Thermal Resistance Junction-case
TO-220
1.56
D²PAK
TO-220FP
5.0
Rthj-amb Thermal Resistance Junction-ambient
62.5
TL
Maximum Lead Temperature for Soldering Purpose
300
(1.6 mm from case, for 10 sec.)
Unit
V
V
V
A
A
A
W
W/°C
V
°C
Unit
°C/W
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: Off
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
VBR(CES) Collectro-Emitter
IC = 250 µA, VGE = 0
600
V
Breakdown Voltage
VBR(ECS) Emitter-Collector
IC = 1mA, VGE = 0
20
V
Breakdown Voltage
ICES
Collector cut-off
(VGE = 0)
VGE = Max Rating, Tc=25°C
VCE = Max Rating, Tc=125°C
10
µA
100
µA
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 20 V , VCE = 0
±100 nA
Table 6: On
Symbol
Parameter
VGE(th) Gate Threshold Voltage
VCE(SAT) Collector-Emitter
Saturation Voltage
Test Conditions
VCE= VGE, IC= 250 µA
VGE=15 V, IC= 5 A,
VGE=15 V, IC= 10 A,
VGE=15 V, IC= 10 A, Tj= 125°C
Min.
2.5
Typ.
1.15
1.35
1.25
Max. Unit
5
V
V
1.7
V
V
2/13
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