STGD3NB60HD Просмотр технического описания (PDF) - STMicroelectronics
Номер в каталоге
Компоненты Описание
производитель
STGD3NB60HD Datasheet PDF : 10 Pages
| |||
STGD3NB60HD
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
ICL
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Latching Current
SWITCHING ON
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
(di/dt)on
Eon
Turn-on Current Slope
Turn-on Switching Losses
Test Conditions
VCE = 25 V , IC =3 A
VCE = 25V, f = 1 MHz, VGE = 0
Min.
VCE = 480V, IC = 3 A,
VGE = 15V
Vclamp = 480 V , Tj = 125°C
12
RG = 10 Ω
Test Conditions
VCC = 480 V, IC = 3 A
RG = 10Ω , VGE = 15 V
VCC= 480 V, IC = 3 A RG=10Ω
VGE = 15 V,Tj = 125°C
Min.
SWITCHING OFF
Symbol
Parameter
Test Conditions
tc
tr(Voff)
Cross-over Time
Off Voltage Rise Time
Vcc = 480 V, IC =3 A,
RGE = 10 Ω , VGE = 15 V
td(off)
Delay Time
tf
Fall Time
Eoff(**) Turn-off Switching Loss
Ets
Total Switching Loss
tc
tr(Voff)
td(off)
Cross-over Time
Off Voltage Rise Time
Delay Time
Vcc = 480 V, IC = 3 A,
RGE = 10 Ω , VGE = 15 V
Tj = 125 °C
tf
Fall Time
Eoff(**) Turn-off Switching Loss
Ets
Total Switching Loss
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
Min.
COLLECTOR-EMITTER DIODE
Symbol
Parameter
If
Forward Current
Ifm
Forward Current pulsed
Vf
Forward On-Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Irrm
Reverse Recovery Current
Test Conditions
If = 1.5 A
If = 1.5 A, Tj = 125 °C
If = 1.5 A ,VR = 400 V,
Tj =125°C, di/dt = 100 A/µs
Min.
Typ.
2.4
235
33
6.6
21
6
7.6
Typ.
5
11
400
77
Typ.
76
36
53
77
33
100
180
82
58
110
88
165
Typ.
1.6
1.3
95
110
2.7
Max.
27
Max.
Max.
Max.
1.5
12
2.1
Unit
S
pF
pF
pF
nC
nC
nC
A
Unit
ns
ns
A/µs
µJ
Unit
ns
ns
ns
ns
µJ
µJ
ns
ns
ns
ns
µJ
µJ
Unit
A
A
V
V
ns
nC
A
3/10
Share Link: 