STF10NM60N Просмотр технического описания (PDF) - STMicroelectronics

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производитель

STF10NM60N

N-channel 600 V, 0.53 Ω, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh™ II Power MOSFET

STMicroelectronics 

STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N

Electrical characteristics

Figure 8. Output characteristics

ID

(A) VGS=10V

14

12

10

8

6

4

Figure 9.

AM03947v1

ID

(A)

14

6V

12

Transfer characteristics

VDS=20V

10

8

6

5V

4

AM03948v1

2

4V

0

0

5 10 15 20 25 30 VDS(V)

2

0

0

2

4

6

8

10 VGS(V)

Figure 10.

BVDSS

(norm)

1.07

1.05

Normalized BVDSS vs temperature Figure 11.

AM03955v1

RDS(on)

(Ω)

ID=1mA

0.56

Static drain-source on resistance

AM00891v1

1.03

0.52

1.01

0.99

0.48

VGS=10V

0.97

0.95

0.93

-50 -25 0

25 50 75 100 TJ(°C)

0.44

0.40

0

2

4

6

8 ID(A)

Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations

VGS

(V)

12

VDS

10

VDD=480V

ID=4A

AM03951v1

VGS

C

(pF)

1000

8

100

6

4

2

0

0

5

10 15

20 Qg(nC)

10

1

0.1

1

10

100

AM03952v1

Ciss

Coss

Crss

VDS(V)

Doc ID 15764 Rev 5

7/17

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